BLF882SU

Overview

The BLF882SU is a 200 W LDMOS RF power transistor designed for broadcast and industrial applications. It delivers 200 W average output power in broadband operations from HF to 860 MHz, with specific narrowband performance of 180 W at 705 MHz under continuous wave conditions. The device operates at a drain-source voltage of 50 V, providing a typical power gain of 21 dB and a drain efficiency of up to 63%. It features integrated ESD protection and excellent ruggedness, capable of withstanding a VSWR of 20:1 through all phases.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• High power gain and high efficiency
• Excellent ruggedness suitable for digital transmitter applications
• RoHS compliant manufacturing

Applications

• Broadcast transmitters in the HF to 860 MHz frequency range
• Industrial applications in the HF to 860 MHz frequency range
• Digital transmitter applications requiring broadband performance

Procurement Notes

Verify the exact ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status and check for any updated reliability data or median time to failure calculators before finalizing procurement specifications.

Selection Notes

Select the BLF882S variant for earless flanged ceramic packages (SOT502B) or the standard BLF882 for flanged packages with mounting holes (SOT502A). Ensure thermal management design accounts for the junction-to-case thermal resistance of 0.56 K/W at rated power levels to maintain optimal operating temperatures.

Part Context

This component belongs to Ampleon's UHF power LDMOS transistor series, specifically engineered for robust performance in high-power RF environments. It utilizes advanced LDMOS technology to provide reliable operation in demanding broadcast and industrial sectors where wide bandwidth and signal integrity are critical.

Replacement Considerations

Consult official Ampleon documentation for qualified substitute part numbers. Verify pinout compatibility and thermal characteristics when considering alternative devices.