BLF884P,112

Overview

The BLF884P is a 350 W LDMOS RF power transistor designed for broadcast and industrial applications. It operates within the 470 MHz to 860 MHz frequency range with a drain-source voltage of 50 V and breakdown voltage of 104 V. The device features internal input matching, achieving a typical power gain of 21 dB and drain efficiency of 46% in class-AB operation at 860 MHz. Thermal resistance from junction to case is 0.22 K/W. It utilizes the SOT1121A flanged ceramic package.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch conditions
• Internal input matching network for optimized broadband performance
• High thermal reliability with low junction-to-case thermal resistance

Applications

• UHF band communication transmitter applications
• Industrial applications in the UHF band
• Digital and analog transmitter systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status and export control classification (EAR99) prior to procurement. Ensure ESD handling precautions are strictly followed during storage and assembly to prevent device damage.

Selection Notes

Select based on required output power and operating frequency within the 470 MHz to 860 MHz range. Consider the SOT1121A flanged package for mounting requirements. Evaluate thermal management capabilities given the 0.22 K/W junction-to-case resistance. Verify compatibility with existing biasing and impedance matching networks for target modulation schemes.

Part Context

This component belongs to Ampleon's UHF power LDMOS transistor portfolio. It is part of the BLF884 series, which includes variants like the BLF884PS. These devices are engineered for robust performance in high-power RF amplification tasks, specifically targeting the demanding requirements of digital broadcasting and industrial radio frequency heating or processing systems.

Replacement Considerations

BLF884PS