BLF888,112

BLF888,112

  • Description:RF MOSFET LDMOS 50V CDFM2
  • Series:-

SKU:ab3c0c69dd3f Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:860MHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.3 A
  • Power - Output:250W
  • Voltage - Rated:104 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-979A
  • Supplier Device Package:CDFM2
  • Configuration:Dual, Common Source

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BLF888,112

Overview

The BLF888 is a 500 W LDMOS RF power transistor designed for broadcast transmitter and industrial applications. It operates in the UHF band from 470 MHz to 860 MHz, delivering 110 W average DVB-T broadband output. The device features integrated ESD protection and advanced flange material for thermal reliability. Key electrical parameters include a drain-source voltage of 50 V, quiescent current of 1.3 A, and power gain of 19 dB. It achieves 46% drain efficiency and -32 dBc third-order intermodulation distortion under 2-tone class-AB conditions at 860 MHz.

Feature Summary

  • Optimized for digital applications with excellent ruggedness
  • Designed for broadband operation across the full UHF band
  • Integrated internal input matching for high gain
  • Advanced flange material for optimum thermal behavior

Applications

  • Communication transmitter applications in the UHF band
  • Industrial applications in the UHF band
  • Digital and analog transmitter applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package version and compliance status. Confirm RoHS directive compliance requirements prior to procurement. Ensure handling procedures account for ElectroStatic Discharge sensitivity during transport and installation.

Selection Notes

Select this component for UHF band designs requiring high power output and broadband performance. Verify that the application circuit can support the required 50 V drain-source voltage and 1.3 A quiescent current. Ensure the thermal management system maintains junction temperature within the specified limits for optimal reliability.

Part Context

The BLF888 is part of Ampleon's UHF power LDMOS transistor portfolio. It utilizes a flanged ceramic package (SOT979A) suitable for base mounting. The device is manufactured by Ampleon USA Inc., continuing the lineage of NXP semiconductor RF power technologies adapted for broadcast and industrial use cases.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinout configurations and thermal resistance values when evaluating potential replacements to ensure compatibility with existing board layouts and cooling systems.

BLF888,112BLF888,112

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