BLF888A,112

Overview

The BLF888A,112 is a 600 W LDMOS RF power transistor designed for broadcast and industrial applications. It operates in the UHF band from 470 MHz to 860 MHz with a drain-source voltage of 50 V. The device features high power gain of 21 dB and drain efficiency up to 69%. It includes internal input matching for broadband operation and exhibits excellent ruggedness with VSWR tolerance ≥ 40:1. The thermal resistance from junction to case is 0.15 K/W. The component utilizes a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads.

Feature Summary

• Excellent ruggedness capable of withstanding load mismatches corresponding to VSWR ≥ 40:1 through all phases
• Internal input matching network designed for high gain and optimum broadband operation across the UHF band
• Optimum thermal behavior and reliability characterized by low junction-to-case thermal resistance
• Compliant with Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications

• Communication transmitter applications in the UHF band
• Industrial applications in the UHF band
• Digital and analog transmitter applications requiring high ruggedness

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm package variant and compliance status. Confirm product availability as specifications may change. Ensure ESD handling precautions are followed during storage and assembly. Cross-reference the datasheet revision date with the latest official documentation from Ampleon to ensure accurate electrical parameters and mechanical dimensions are used in design.

Selection Notes

Select this component for UHF broadband amplifier designs requiring high output power and robustness against load mismatches. Consider the SOT539A flanged package for efficient heat dissipation via direct mounting. Evaluate the internal input matching for simplified circuit design. Verify that the operating frequency range of 470 MHz to 860 MHz aligns with the system requirements. Assess thermal management needs based on the specified junction-to-case thermal resistance.

Part Context

The BLF888A belongs to the UHF power LDMOS transistor family from Ampleon. It is often compared with the BLF888AS, which shares similar electrical characteristics but uses an earless flanged balanced ceramic package (SOT539B). Both variants are designed for high-power broadcast and industrial transmitter applications in the UHF spectrum. The BLF888A specifically denotes the version with mounting holes in its ceramic package structure.

Replacement Considerations

The BLF888AS is a functional equivalent within the same family, differing primarily in the physical package configuration (earless vs. flanged with holes). Verify mechanical fit and mounting requirements when substituting between these variants.