SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF888B,112 is a UHF power LDMOS transistor manufactured by Ampleon USA Inc. It is designed for broadcast transmitter and industrial applications, offering high ruggedness suitable for both digital and analog systems. The device features dual N-channel configuration in an SOT-539B flange mount package. Key electrical parameters include a drain-source voltage of 50 V, a rated voltage of 104 V, and a maximum output power of 650 W. It operates within the frequency range of 470 MHz to 860 MHz with a typical gain of 21 dB.
Verify the manufacturer designation carefully, as this component has been produced by multiple entities including Philips Semiconductors, NXP Semiconductors, and Ampleon USA Inc. Ensure the datasheet revision matches the specific production batch requirements. Confirm that the SOT-539B package variant aligns with your thermal management infrastructure before finalizing procurement orders.
Select this component when designing UHF stage amplifiers requiring 650 W output power. Ensure the biasing circuit supports Class-AB operation for optimal linearity in DVB-T applications. Verify that the cooling solution can handle the thermal dissipation associated with high-power RF operation at frequencies up to 860 MHz.
This part belongs to the BLF888 series of UHF power LDMOS transistors originally developed by Philips Semiconductors and later managed by NXP and Ampleon. The series is widely recognized in the broadcast industry for its reliability. The BLF888B specifically denotes the dual-channel variant housed in the SOT-539B ceramic-metal package, distinct from single-channel versions like the BLF888A.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official replacement guides from Ampleon or NXP to ensure pinout and thermal compatibility.