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The BLF888BS,112 is a 650 W LDMOS RF power transistor designed for UHF band applications. It operates within the 470 MHz to 860 MHz frequency range and features internal input matching. The device utilizes an SOT539B earless flanged balanced ceramic package with four leads. Key electrical parameters include a drain-source voltage of 104 V, a quiescent drain current of 1.3 A, and a thermal resistance from junction to case of 0.15 K/W. In narrowband tests at 860 MHz, it delivers 250 W average output power with 21 dB gain and 46% efficiency.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm RoHS compliance status as required by project specifications. Ensure that the procurement channel provides valid traceability for this RF power component type.
Select this component for UHF broadcast and industrial transmitter designs requiring high power handling. Verify that the application circuit supports the specified 50 V drain-source voltage and 1.3 A quiescent current. Ensure the PCB layout accommodates the SOT539B package dimensions and mounting requirements.
This part belongs to the BLF888 series of UHF power LDMOS transistors manufactured by Ampleon USA Inc. The BLF888BS variant specifically denotes the earless flanged balanced version housed in the SOT539B ceramic package. It serves as a high-power solution for broadband RF amplification tasks.
The BLF888B is the flanged balanced counterpart featuring two mounting holes and the SOT539A package. Both devices share identical electrical performance characteristics but differ in physical mounting configurations.