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The Ampleon BLF888ESU is a 750 W LDMOS RF power transistor designed for asymmetrical broadcast Doherty transmitter applications, operating at 150 W DVB-T average power. It features a main amplifier drain-source voltage of 104 V and a peak amplifier drain-source voltage of 120 V. The device operates within the UHF band (470 MHz to 790 MHz) with a typical power gain of 17 dB and drain efficiency up to 52%. Packaged in an earless flanged balanced ceramic SOT539B housing, it includes integrated ESD protection and exhibits excellent ruggedness suitable for digital and analog transmitter environments.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm package variations. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the component status aligns with production specifications before initiating orders. Cross-reference the part number with official distributor catalogs to validate availability and authenticity.
Select this component for asymmetrical Doherty architectures requiring high efficiency and ruggedness in UHF bands. Verify thermal management capabilities, as continuous use at maximum temperature affects reliability. Ensure the application supports the specified VSWR conditions of 40:1 through all phases. Confirm compatibility with the SOT539B earless flanged ceramic package constraints.
The BLF888ESU belongs to the BLF888E series of UHF power LDMOS transistors manufactured by Ampleon. This series is engineered for broadcast transmitter applications, offering high power gain and excellent reliability. The ES variant specifically denotes the earless flanged balanced ceramic package (SOT539B), distinguishing it from the standard flanged version.
BLF888E serves as the primary counterpart within the same product family, differing primarily in package configuration.