BLF8G09LS-270GWQ

BLF8G09LS-270GWQ

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-

SKU:70ec1326e79f Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tube
  • Technology:LDMOS
  • Frequency:718.5MHz ~ 725.5MHz
  • Gain:20dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:2:00 AM
  • Power - Output:67W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1244C
  • Supplier Device Package:CDFM6
  • Configuration:-

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BLF8G09LS-270GWQ

Overview

The BLF8G09LS-270GWQ is a 270 W LDMOS power transistor designed for base station applications in the 716 MHz to 960 MHz frequency range. It features improved video bandwidth and operates at a drain-source voltage of 28 V with a maximum rating of 65 V. The device delivers an average output power of 67 W, achieving a typical power gain of 20 dB and a drain efficiency of 33%. It includes integrated ESD protection and decoupling leads that enable a typical video bandwidth of 55 MHz. The component utilizes an earless flanged ceramic package (SOT1244C) with gull-wing leads.

Feature Summary

  • Enhanced ruggedness capable of withstanding a VSWR of 7:1 through all phases under specified operating conditions
  • Decoupling leads provide improved video bandwidth for better performance with complex modulation signals
  • Lower output capacitance optimized for use in Doherty amplifier configurations
  • Internally matched design simplifies circuit integration and reduces memory effects

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications within the 716 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm lead time and availability status. Ensure compliance with RoHS directives and handle the device according to electrostatic discharge precautions during storage and assembly processes.

Selection Notes

Select this component for designs requiring high linearity and efficiency in broadband cellular infrastructure. Consider the thermal resistance characteristics and ensure adequate heat sinking to maintain junction temperature within safe limits during continuous operation.

Part Context

This part belongs to the BLF8G09LS series of power LDMOS transistors manufactured by Ampleon USA Inc. The 'W' designation indicates the straight lead version, while the 'GW' variant specifies the gull-wing lead configuration housed in the SOT1244C package.

Replacement Considerations

The BLF8G09LS-270W serves as the straight lead alternative within the same product family. Verify pinout compatibility and thermal interface requirements before substituting between the W and GW variants.

BLF8G09LS-270GWQBLF8G09LS-270GWQ

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