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The BLF8G09LS-400PGWJ is a 400 W LDMOS power transistor designed for base station applications in the 716 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 95 W at a typical gain of 20.6 dB. The device features a maximum drain-source breakdown voltage of 65 V, a junction-to-case thermal resistance of 0.26 K/W, and a gate-source threshold voltage ranging from 1.5 V to 2.3 V. Packaged in an earless flanged ceramic SOT1242C housing with gull-wing leads, it supports broadband operation and includes integrated ESD protection.
Verify component authenticity through authorized Ampleon distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required package variant. Ensure compliance with RoHS directives as specified in the product data sheet. Validate storage conditions to prevent moisture damage prior to soldering.
Select this component for high-efficiency RF power amplifier designs requiring robust ruggedness and low thermal resistance. Consider the SOT1242C package geometry for board layout compatibility. Evaluate impedance matching networks based on the provided load-pull data for optimal power transfer across the target frequency band.
This part belongs to the BLF8 series of LDMOS power transistors manufactured by Ampleon USA Inc. The 'GW' suffix indicates the gull-wing lead configuration within the SOT1242C package, distinguishing it from the straight-lead SOT1242B variant. It is engineered specifically for demanding cellular infrastructure environments.
Public confirmed substitute part numbers are not available in the provided documentation.