BLF8G09LS-400PGWJ

BLF8G09LS-400PGWJ

$67.58
  • Description:RF MOSFET LDMOS 28V CDFM8
  • Series:-

SKU:bd0d81b4ef32 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM8
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:718.5MHz ~ 725.5MHz
  • Gain:20.6dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:3.4 A
  • Power - Output:95W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1242C
  • Supplier Device Package:CDFM8
  • Configuration:Dual, Common Source

Download product information

BLF8G09LS-400PGWJ

Overview

The BLF8G09LS-400PGWJ is a 400 W LDMOS power transistor designed for base station applications in the 716 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 95 W at a typical gain of 20.6 dB. The device features a maximum drain-source breakdown voltage of 65 V, a junction-to-case thermal resistance of 0.26 K/W, and a gate-source threshold voltage ranging from 1.5 V to 2.3 V. Packaged in an earless flanged ceramic SOT1242C housing with gull-wing leads, it supports broadband operation and includes integrated ESD protection.

Feature Summary

  • Designed for low memory effects providing excellent pre-distortability
  • Lower output capacitance for improved performance in Doherty applications
  • Decoupling leads to enable improved video bandwidth (45 MHz typical)
  • Internally matched for ease of use

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 716 MHz to 960 MHz frequency range
  • 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 10 MHz carrier spacing

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required package variant. Ensure compliance with RoHS directives as specified in the product data sheet. Validate storage conditions to prevent moisture damage prior to soldering.

Selection Notes

Select this component for high-efficiency RF power amplifier designs requiring robust ruggedness and low thermal resistance. Consider the SOT1242C package geometry for board layout compatibility. Evaluate impedance matching networks based on the provided load-pull data for optimal power transfer across the target frequency band.

Part Context

This part belongs to the BLF8 series of LDMOS power transistors manufactured by Ampleon USA Inc. The 'GW' suffix indicates the gull-wing lead configuration within the SOT1242C package, distinguishing it from the straight-lead SOT1242B variant. It is engineered specifically for demanding cellular infrastructure environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

BLF8G09LS-400PGWJBLF8G09LS-400PGWJ
$67.58
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