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The BLF8G09LS-400PGWQ is a 400 W LDMOS power transistor designed for base station applications in the 716 MHz to 960 MHz frequency range. It features an earless flanged ceramic package (SOT1242C) with gull-wing leads and integrated ESD protection. Typical performance at VDS = 28 V, IDq = 3400 mA, and Tcase = 25 °C includes a drain efficiency of 30%, power gain of 20.6 dB, and output power of 95 W under 2-carrier W-CDMA conditions. The device supports broadband operation with low memory effects and offers excellent ruggedness against load mismatches.
Verify the specific ordering suffix 'Q' against official Ampleon documentation to confirm its exact impact on specifications or packaging. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts prior to finalizing procurement plans.
Select this component for high-efficiency RF power amplifier designs requiring robust performance across wide frequency bands. Ensure thermal management solutions can maintain junction temperatures within limits, as continuous use at maximum temperature affects reliability.
This part belongs to the BLF8G09LS series of power LDMOS transistors manufactured by Ampleon USA Inc. The PGW variant specifically denotes the SOT1242C package configuration with gull-wing leads, distinguishing it from the straight-lead PW version.
The BLF8G09LS-400PW serves as a functional equivalent using the same internal die but housed in the SOT1242B earless flanged ceramic package with straight leads instead of gull-wing leads.