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The BLF8G09LS-400PW is a 400 W LDMOS power transistor designed for base station applications in the 716 MHz to 960 MHz frequency range. It operates at a drain-source voltage of 28 V with a maximum rating of 65 V and features an earless flanged ceramic package (SOT1242B). Typical performance at Tcase = 25 °C includes a power gain of 20.6 dB, drain efficiency of 30%, and an adjacent channel power ratio of -35 dBc under 2-carrier W-CDMA conditions. The device exhibits excellent ruggedness, capable of withstanding a VSWR of 7:1 through all phases.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm lead availability and exact pin configuration. Confirm RoHS compliance status as required by local regulations. Ensure proper handling precautions are observed due to electrostatic sensitivity. Validate thermal management requirements based on the specified junction-to-case thermal resistance.
Select this component for high-power RF amplification tasks requiring wideband coverage across cellular bands. Consider the SOT1242B package dimensions for PCB layout compatibility. Evaluate the internal matching network suitability for the target impedance environment. Assess the thermal stability characteristics relative to the expected operating case temperature.
This part belongs to the BLF8 series of LDMOS power transistors manufactured by Ampleon USA Inc. It is specifically engineered for wireless infrastructure, offering high linearity and efficiency. The product data sheet defines its electrical limits and typical performance metrics for design integration into multi-carrier systems.
BLF8G09LS-400PGW
The device can withstand a load mismatch corresponding to a VSWR of 7:1 through all phases.
The device can operate with the supply current delivered through the combined decoupling leads.
The device shows a typical video bandwidth of 45 MHz in class-AB operation within the 722 MHz band.