BLF8G09LS-400PWU

BLF8G09LS-400PWU

$68.12
  • Description:RF MOSFET LDMOS 28V CDFM8
  • Series:-

SKU:43f2dce4da65 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM8
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:718.5MHz ~ 725.5MHz
  • Gain:20.6dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:3.4 A
  • Power - Output:95W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1242B
  • Supplier Device Package:CDFM8
  • Configuration:Dual, Common Source

Download product information

BLF8G09LS-400PWU

Overview

The BLF8G09LS-400PW is a 400 W LDMOS power transistor designed for base station applications in the 716 MHz to 960 MHz frequency range. It operates at a drain-source voltage of 28 V with a maximum rating of 65 V and features an earless flanged ceramic package (SOT1242B). Typical performance at Tcase = 25 °C includes a power gain of 20.6 dB, drain efficiency of 30%, and an adjacent channel power ratio of -35 dBc under 2-carrier W-CDMA conditions. The device exhibits excellent ruggedness, capable of withstanding a VSWR of 7:1 through all phases.

Feature Summary

  • Designed for broadband operation with low memory effects to facilitate pre-distortion
  • Features decoupling leads that enable improved video bandwidth
  • Optimized for Doherty applications through reduced output capacitance
  • Internally matched for ease of use and integrated ESD protection

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 716 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm lead availability and exact pin configuration. Confirm RoHS compliance status as required by local regulations. Ensure proper handling precautions are observed due to electrostatic sensitivity. Validate thermal management requirements based on the specified junction-to-case thermal resistance.

Selection Notes

Select this component for high-power RF amplification tasks requiring wideband coverage across cellular bands. Consider the SOT1242B package dimensions for PCB layout compatibility. Evaluate the internal matching network suitability for the target impedance environment. Assess the thermal stability characteristics relative to the expected operating case temperature.

Part Context

This part belongs to the BLF8 series of LDMOS power transistors manufactured by Ampleon USA Inc. It is specifically engineered for wireless infrastructure, offering high linearity and efficiency. The product data sheet defines its electrical limits and typical performance metrics for design integration into multi-carrier systems.

Replacement Considerations

BLF8G09LS-400PGW

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 7:1 through all phases.

How does the device handle supply current delivery?

The device can operate with the supply current delivered through the combined decoupling leads.

What is the typical video bandwidth capability?

The device shows a typical video bandwidth of 45 MHz in class-AB operation within the 722 MHz band.

BLF8G09LS-400PWUBLF8G09LS-400PWU
$68.12
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