BLF8G10L-160,112

Overview

The BLF8G10L-160 is a 160 W LDMOS power transistor designed for base station applications in the 920 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 30 V and a quiescent current of 1100 mA, delivering an average output power of 35 W. The device provides a typical power gain of 19.7 dB and a drain efficiency of 29% under two-carrier W-CDMA test conditions. It features low thermal resistance (0.50 K/W) and is housed in a flanged SOT502A ceramic package.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch
• Low thermal resistance providing excellent thermal stability
• Designed for broadband operation within the specified frequency range
• Lower output capacitance optimized for Doherty applications

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 920 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts prior to finalizing procurement decisions.

Selection Notes

Select this component for designs requiring high power output and efficiency in the 920 MHz to 960 MHz band. Ensure the application circuit supports the required 30 V drain supply and 1100 mA bias current. Verify that the PCB layout accommodates the SOT502A flanged package dimensions and mounting requirements.

Part Context

This part belongs to the Ampleon BLF8 series of LDMOS power transistors. It is specifically engineered for wireless communication infrastructure, offering a balance of high power density and linearity suitable for modern cellular network base stations operating in the 900 MHz spectrum.

Replacement Considerations

The BLF8G10LS-160 serves as a direct functional equivalent, differing only in the earless SOT502B package variant. No other substitutes are documented in the provided datasheet.