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The BLF8G10LS-160,118 is a 160 W LDMOS power transistor designed for base station applications in the 920 MHz to 960 MHz frequency range. It utilizes an earless flanged SOT502B ceramic package with two leads and features internal matching for ease of use. Typical performance at Tcase = 25 °C includes a drain efficiency of 29%, a power gain of 19.7 dB, and an adjacent channel power ratio (ACPR) of -38 dBc under 2-carrier W-CDMA test conditions. The device operates with a drain-source voltage of 30 V and a quiescent current of 1100 mA.
Verify the specific ordering suffix against official Ampleon documentation to confirm package type and compliance status. Confirm RoHS directive compliance requirements prior to integration. Ensure that the sourcing channel provides valid traceability for this discontinued component series.
Select this component for high-efficiency linear amplification in cellular infrastructure. Evaluate thermal management capabilities given the junction-to-case resistance specifications. Verify impedance matching networks align with the provided typical impedance data for optimal power transfer.
This part belongs to the BLF8G10L-160 family, distinguished by its SOT502B earless flanged ceramic package compared to the standard SOT502A variant. Both variants share identical electrical characteristics and are intended for W-CDMA base station power amplifier modules.
The BLF8G10L-160 serves as the primary functional equivalent within the same product family, differing only in the inclusion of mounting ears on the SOT502A package.