BLF8G10LS-300PJ

Overview

The BLF8G10LS-300P is a 300 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It operates with a drain-source voltage of 65 V and typically delivers 65 W average output power at 28 V bias. The device provides a typical power gain of 20.5 dB and a drain efficiency of 32% under two-carrier W-CDMA test conditions. It features low thermal resistance (0.29 K/W) and is housed in an earless flanged balanced ceramic package (SOT539B).

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch.
• Low thermal resistance providing excellent thermal stability.
• Lower output capacitance optimized for Doherty applications.
• Designed for low memory effects to facilitate pre-distortion.

Applications

• RF power amplifier for multi-standard base stations.
• Multi-carrier applications in the 700 MHz to 1000 MHz range.
• Doherty power amplifier configurations.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog, as product status may have changed since the datasheet release. Confirm that the SOT539B package dimensions match the intended mechanical design constraints. Ensure compliance with RoHS directives if required by the final assembly specifications.

Selection Notes

Select this component for high-power base station transmitters requiring operation between 700 MHz and 1000 MHz. The internal matching simplifies circuit design, while the integrated ESD protection aids handling. Verify that the application can support the required 28 V supply and adequate heat sinking for the specified thermal resistance.

Part Context

This part belongs to the Ampleon BLF8G series of LDMOS power transistors. These devices are engineered specifically for wireless infrastructure, offering a balance of high power density and linearity. The BLF8G10LS-300P represents a high-power variant within this family, targeting wideband cellular standards.

Replacement Considerations

Consult official Ampleon documentation for verified cross-reference part numbers. Do not substitute based on generic electrical parameters alone; verify pinout compatibility and thermal characteristics with the original design requirements.

FAQ

What is the maximum junction temperature?

The maximum junction temperature is 225 °C.

Is the device internally matched?

Yes, the BLF8G10LS-300P is internally matched for ease of use.

What is the typical thermal resistance from junction to case?

The typical thermal resistance from junction to case is 0.29 K/W.