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The BLF8G19LS-170BV is a 170 W LDMOS power transistor designed for base station applications in the 1800 MHz to 1990 MHz frequency range. It features improved video bandwidth and low memory effects for excellent pre-distortability. Typical performance at Tcase = 25 °C includes a drain efficiency of 32% with 60 W average output power under 2-carrier W-CDMA conditions (VDS = 32 V, IDq = 1300 mA). The device operates with a maximum drain-source voltage of 65 V and a junction temperature limit of 225 °C. It utilizes an earless flanged SOT1120B ceramic package.
Verify the specific ordering suffix against official Ampleon documentation before procurement. Confirm that the component status remains active or qualified for production. Ensure compliance with RoHS Directive 2002/95/EC requirements as stated in the datasheet. Validate the package version matches the required design specifications.
Select this component for base station designs requiring high efficiency and wide video bandwidth. Ensure the thermal management system can maintain the case temperature within specified limits to achieve optimal drain efficiency. Verify that the input and output impedance matching networks align with the typical impedance values provided for the target operating frequency.
This part belongs to the BLF8G series of LDMOS power transistors from Ampleon USA Inc. The series focuses on RF power amplification for telecommunications infrastructure. The BLF8G19LS-170BV specifically targets the 1800 MHz to 1990 MHz band with enhanced video bandwidth capabilities compared to standard variants.
Consult official Ampleon substitution guides for verified replacements. Do not assume functional equivalence with other models in the BLF8G family without verifying pinout, impedance, and thermal characteristics.