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The BLF8G20LS-160V is a 160 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects for excellent pre-distortability. The device operates at a drain-source voltage of 28 V with a quiescent current of 800 mA, delivering an average output power of 35.5 W. Typical performance includes a power gain of 20 dB, a drain efficiency of 34%, and an adjacent channel power ratio of -29 dBc under two-carrier W-CDMA conditions. It utilizes an earless flanged SOT1239B ceramic package.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration. Ensure proper ESD handling precautions are observed during storage and assembly to prevent damage to the sensitive gate structure.
Select this component for wideband RF power amplification where high linearity and efficiency are required. The internal matching simplifies circuit design compared to unmatched devices. Verify that the application environment supports the specified junction temperature limits and thermal management requirements for continuous operation.
This part belongs to the BLF8G series of LDMOS power transistors from Ampleon USA Inc. The series is engineered for cellular infrastructure, offering robust performance across various frequency bands. The BLF8G20LS-160V specifically targets the 1800-2000 MHz spectrum with optimized characteristics for modern modulation schemes.
Consult official Ampleon substitution guides for verified replacements. Unverified cross-references may differ in pinout or electrical specifications.