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The BLF8G20LS-160V is a 160 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects for excellent pre-distortability. In a common source class-AB production test circuit at VDS = 28 V, IDq = 800 mA, and Tcase = 25 °C, it delivers an average output power of 35.5 W with a typical power gain of 20 dB and drain efficiency of 34%. The device has a junction-to-case thermal resistance of 0.290 K/W and withstands a load mismatch of VSWR = 10:1.
Verify the specific ordering suffix against the manufacturer's current documentation before procurement. Confirm that the package version matches the required SOT1239B earless flanged ceramic specification. Ensure compliance with RoHS directives and check for any product change notices or end-of-life announcements prior to finalizing orders.
Select this component for broadband RF power amplifier designs requiring high efficiency and linearity in the 1800 MHz to 2000 MHz band. Consider the internal matching and integrated ESD protection for simplified circuit design. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance for the intended operating conditions.
This part belongs to the Ampleon BLF8G series of LDMOS power transistors. It is specifically engineered for cellular infrastructure, offering enhanced performance metrics compared to standard variants. The device utilizes a ceramic package suitable for high-power density applications in telecommunications equipment.
Consult official Ampleon substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully when considering other models within the BLF8G family.