SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF8G20LS-200V is a 200 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for digital signal transmission with excellent pre-distortability. The device operates at a drain-source voltage of 28 V with a quiescent current of 1600 mA. In typical two-carrier W-CDMA operation, it delivers an average output power of 55 W with a gain of 17.5 dB and a drain efficiency of 33%. The transistor is housed in an earless flanged SOT1120B ceramic package.
Verify the specific ordering suffix against official Ampleon documentation before procurement. Confirm that the component status aligns with project requirements, as availability may vary. Ensure compliance with RoHS directives and verify handling precautions for electrostatic sensitive devices during installation.
Select this component for high-efficiency linear amplification in cellular infrastructure. Evaluate thermal management capabilities given the junction-to-case thermal resistance. Ensure the application circuit supports the required 28 V drain supply and 1600 mA bias current for optimal performance within the specified frequency band.
This part belongs to the BLF8G20 series of LDMOS power transistors manufactured by Ampleon USA Inc. The series is engineered for robust performance in wireless communication systems. The specific model utilizes an earless flanged ceramic package to facilitate efficient heat dissipation and reliable mounting in base station hardware.
Consult official Ampleon substitution guides for verified replacements. Verify pin compatibility and electrical specifications when considering alternative components from other manufacturers.