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The BLF8G20LS-200V is a 200 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems. The device operates at a drain-source voltage of 28 V with a quiescent current of 1600 mA. In typical 2-carrier W-CDMA operation, it delivers an average output power of 55 W with a gain of 17.5 dB and a drain efficiency of 33%. The transistor is housed in an earless flanged SOT1120B ceramic package.
Verify component authenticity through authorized Ampleon channels or certified distributors. Confirm RoHS compliance status and check for any product change notices (PCN) related to manufacturing site changes. Ensure proper electrostatic discharge precautions are observed during storage and handling due to integrated ESD protection limitations.
Select this component for wideband code division multiple access transmitter stages requiring high linearity and ruggedness. Evaluate thermal management requirements based on the junction-to-case thermal resistance. Ensure the application supports the specified 28 V drain supply and 1600 mA quiescent current operating conditions for optimal performance.
This part belongs to the BLF8G20 series of LDMOS power transistors from Ampleon. It is specifically optimized for cellular infrastructure within the 1800-2000 MHz band. The LS suffix indicates specific internal matching and decoupling configurations distinct from other variants in the family.
Public confirmed substitute part numbers are not available in the provided documentation.