BLF8G20LS-200V,115

BLF8G20LS-200V,115

$85.08
  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-

SKU:b4fe5fba88d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.81GHz ~ 1.88GHz
  • Gain:17.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:55W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1120B
  • Supplier Device Package:LDMOST
  • Configuration:-

Download product information

BLF8G20LS-200V,115

Overview

The BLF8G20LS-200V is a 200 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems. The device operates at a drain-source voltage of 28 V with a quiescent current of 1600 mA. In typical 2-carrier W-CDMA operation, it delivers an average output power of 55 W with a gain of 17.5 dB and a drain efficiency of 33%. The transistor is housed in an earless flanged SOT1120B ceramic package.

Feature Summary

  • Decoupling leads enable improved video bandwidth for enhanced signal fidelity
  • Designed for low memory effects providing excellent pre-distortability
  • Internally matched for ease of use in RF amplifier designs
  • Integrated ESD protection for robust handling

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications in the 1800 MHz to 2000 MHz frequency range

Procurement Notes

Verify component authenticity through authorized Ampleon channels or certified distributors. Confirm RoHS compliance status and check for any product change notices (PCN) related to manufacturing site changes. Ensure proper electrostatic discharge precautions are observed during storage and handling due to integrated ESD protection limitations.

Selection Notes

Select this component for wideband code division multiple access transmitter stages requiring high linearity and ruggedness. Evaluate thermal management requirements based on the junction-to-case thermal resistance. Ensure the application supports the specified 28 V drain supply and 1600 mA quiescent current operating conditions for optimal performance.

Part Context

This part belongs to the BLF8G20 series of LDMOS power transistors from Ampleon. It is specifically optimized for cellular infrastructure within the 1800-2000 MHz band. The LS suffix indicates specific internal matching and decoupling configurations distinct from other variants in the family.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

BLF8G20LS-200V,115BLF8G20LS-200V,115
$85.08
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