BLF8G20LS-200V,118

Overview

The BLF8G20LS-200V is a 200 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems. The device operates at a drain-source voltage of 28 V with a quiescent current of 1600 mA. In typical two-carrier W-CDMA operation, it delivers an average output power of 55 W with a gain of 17.5 dB and a drain efficiency of 33%. The component utilizes an earless flanged SOT1120B ceramic package.

Feature Summary

• Internally matched design for ease of use
• Integrated ESD protection
• Decoupling leads enable improved video bandwidth
• Designed for low memory effects providing excellent pre-distortability

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 1800 MHz to 2000 MHz frequency range

Procurement Notes

Verify the exact ordering suffix against official Ampleon documentation before procurement. Confirm that the specific variant matches the required package version and manufacturing site. Ensure compliance with RoHS directives as specified in the product data sheet. Check for any recent product change notices or end-of-life announcements prior to finalizing orders.

Selection Notes

Select this component for high-efficiency RF power amplifier designs requiring robust ruggedness and low intermodulation distortion. Verify thermal management capabilities to maintain case temperatures within the recommended operating limits. Ensure the application circuit supports the specified impedance matching requirements for optimal performance across the target frequency band.

Part Context

This part belongs to the BLF8G20 series of power LDMOS transistors manufactured by Ampleon USA Inc. It is specifically engineered for wideband code division multiple access (W-CDMA) infrastructure. The device represents a laterally diffused metal oxide semiconductor technology optimized for linear amplification with high power density.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume functional equivalence with other models without verifying electrical parameters and pin configurations.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF8G20LS-200V can withstand a load mismatch corresponding to a Voltage Standing Wave Ratio (VSWR) of 10:1 through all phases under specified Class-AB operating conditions.

What is the typical video bandwidth of this transistor?

The device features decoupling leads that provide an improved video bandwidth of approximately 80 MHz.

How does the device handle electrostatic discharge?

The BLF8G20LS-200V includes integrated ElectroStatic Discharge (ESD) protection. However, standard precautions for handling electrostatic sensitive devices should still be observed during assembly.