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The BLF8G20LS-230V is a 230 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects for excellent pre-distortability. The device operates with a drain-source voltage of 65 V, a gate-source voltage of +13 V, and a junction temperature up to 225 °C. Typical performance at 28 V and 1800 mA quiescent current includes 18 dB gain, 31.7% drain efficiency, and -29 dBc ACPR under 2-carrier W-CDMA conditions.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package version and compliance status. Confirm RoHS directive compliance requirements prior to procurement. Check product status updates on the Ampleon website as specifications may change without notice.
Select this component for high-efficiency RF power amplifier designs requiring robust load mismatch tolerance. Ensure the application circuit maintains the case temperature within specified limits to preserve reliability. Verify that the design supports the required video bandwidth for linear modulation schemes.
This part belongs to the BLF8G20 series of LDMOS transistors from Ampleon USA Inc. It utilizes an earless flanged ceramic package (SOT1239B) suitable for high-power base station deployments. The device integrates ESD protection and is optimized for multi-carrier operations.
Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume functional equivalence with other models in the BLF8G family without verifying pinout and electrical parameters.