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The BLF8G20LS-400PV is a 400 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1995 MHz frequency range. It features an earless flanged ceramic package (SOT1242B) with decoupling leads that enable improved video bandwidth of 120 MHz typical. The device operates at a drain-source voltage of 28 V and delivers 95 W output power with 19 dB gain under 2-carrier W-CDMA conditions. Key electrical parameters include a maximum drain-source voltage of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.23 K/W.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm lead frame configuration. The PV suffix denotes the straight lead version, while PGV indicates gull-wing leads. Ensure compatibility with the intended PCB footprint before finalizing procurement orders.
Select this component for high-efficiency broadband operations requiring low memory effects. Verify that the application supports the required 28 V supply and 3.4 A quiescent current. Confirm that the SOT1242B package dimensions align with the mechanical constraints of the housing assembly.
This part belongs to the BLF8G20LS series of power LDMOS transistors manufactured by Ampleon USA Inc. The series is engineered for cellular infrastructure, specifically targeting wideband code division multiple access (W-CDMA) systems. The LS designation indicates the inclusion of decoupling leads for superior signal integrity.
BLF8G20LS-400PGV
The typical video bandwidth is 120 MHz when measured in a class-AB test circuit operating in the 1800 MHz to 1880 MHz frequency band.
It can withstand a load mismatch corresponding to a Voltage Standing Wave Ratio (VSWR) of 10:1 through all phases under specified Class-AB operating conditions.
The maximum junction temperature is rated at 225 °C.