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The BLF8G22LS-140U is a power LDMOS transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It delivers an average output power of 33 W with a drain efficiency of 32.5% and a power gain of 18.5 dB under typical two-carrier W-CDMA test conditions at VDS = 28 V and IDq = 900 mA. The device features a maximum drain-source voltage of 65 V, a gate-source voltage limit of +13 V, and a junction temperature rating up to 225 °C. It utilizes an earless flanged ceramic package (SOT502B) with a thermal resistance from junction to case of 0.265 K/W.
Verify the specific ordering suffix against official Ampleon documentation before purchase. Confirm that the component matches the required SOT502B package outline and lead configuration. Ensure compliance with RoHS directives as specified in the product data sheet. Validate the authenticity of the supplier through authorized distribution channels.
Select this component for broadband operations requiring high ruggedness and low Rth. Consider its suitability for Class-AB production test circuits operating at 28 V. Evaluate impedance matching requirements based on provided load-pull data for frequencies between 2110 MHz and 2170 MHz.
This part belongs to the BLF8G22 series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless communication infrastructure, offering a balance of high efficiency and linearity. The device represents a mature technology solution for wideband code division multiple access systems.
Consult official Ampleon substitution guides for verified alternatives. Do not assume pin compatibility with other packages without verifying the mechanical drawing. Cross-reference electrical parameters strictly within the same frequency band specifications.