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The BLF8G22LS-160BV is a 160 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems like W-CDMA. The device operates with a drain-source voltage of 32 V and a quiescent current of 1300 mA. Key electrical parameters include a typical power gain of 18.0 dB, drain efficiency of 32%, and an adjacent channel power ratio of -31 dBc under two-carrier test conditions. It utilizes an earless flanged SOT1120B ceramic package.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package version and compliance status. Ensure that the procurement channel provides original manufacturer packaging to maintain component integrity. Cross-reference the part number with official Ampleon databases to validate authenticity before finalizing acquisition.
Select this component for designs requiring high ruggedness and low thermal resistance in the 2.1 GHz band. The internal matching network reduces external component count. Verify that the application supports the specified class-AB operating conditions and that the PCB layout accommodates the SOT1120B package dimensions for optimal thermal dissipation.
This device belongs to the BLF8G22LS series of power LDMOS transistors manufactured by Ampleon USA Inc. The series is engineered for robust performance in wireless infrastructure. The BLF8G22LS-160BV specifically targets the 2000 MHz to 2200 MHz spectrum, offering a balance of high power output and linearity for modern cellular base station deployments.
Consult the official Ampleon replacement guide for verified substitutes. Direct replacements must match the SOT1120B package and electrical specifications. Generic equivalents are not recommended due to strict impedance and thermal requirements.