BLF8G22LS-160BVX

Overview

The BLF8G22LS-160BV is a 160 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It features improved video bandwidth and low memory effects for excellent pre-distortability. The device operates at a drain-source voltage of 32 V with a quiescent current of 1300 mA, delivering an average output power of 55 W in two-carrier W-CDMA mode. Key electrical parameters include a typical power gain of 18.0 dB, drain efficiency of 32%, and an adjacent channel power ratio of -31 dBc. The junction-to-case thermal resistance is 0.27 K/W.

Feature Summary

• Decoupling leads enable improved video bandwidth for enhanced signal fidelity
• Lower output capacitance optimizes performance in Doherty amplifier configurations
• Internally matched design simplifies circuit integration and reduces component count
• Integrated ESD protection and current sense capabilities enhance operational reliability

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications within the 2000 MHz to 2200 MHz band
• Doherty amplifier architectures requiring low memory effects

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package version and compliance status. Confirm that the application environment remains within the specified case temperature limits to maintain device longevity and prevent MTTF degradation. Cross-reference the RoHS directive compliance requirements with local regulatory standards before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high ruggedness and low thermal resistance in the 2.1 GHz cellular band. Ensure the biasing network supports the recommended 32 V drain supply and 1300 mA quiescent current. Verify that the load impedance matches the provided typical values to achieve optimal power gain and efficiency targets under class-AB operation conditions.

Part Context

This part belongs to the BLF8G series of LDMOS transistors from Ampleon USA Inc., specifically engineered for wireless infrastructure. It utilizes an earless flanged ceramic SOT1120B package to facilitate efficient heat dissipation. The device represents a generation of RF power transistors optimized for modern multi-standard base station architectures demanding high linearity and spectral purity.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Direct replacements must match the SOT1120B package outline and pin configuration. Verify that any substitute maintains comparable video bandwidth and thermal resistance characteristics to preserve original circuit performance without redesign.

FAQ

What is the typical video bandwidth of the BLF8G22LS-160BV?

The device exhibits a typical video bandwidth of 100 MHz in a class-AB test circuit at 2.1 GHz.

How does the BLF8G22LS-160BV handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the maximum junction temperature rating?

The absolute maximum junction temperature is rated at 200 °C.