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The BLF8G22LS-205V is a 205 W LDMOS power transistor designed for base station applications in the 2100 MHz to 2200 MHz frequency range. It features improved video bandwidth and operates at a drain-source voltage of 28 V with a quiescent current of 1200 mA. Typical performance includes a power gain of 18.3 dB, drain efficiency of 32.5%, and an adjacent channel power ratio of -32 dBc under 1-carrier W-CDMA conditions. The device utilizes an earless flanged SOT1239B ceramic package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package version and compliance status. Confirm that the component meets all required environmental directives before procurement. Cross-reference the part number with the latest product data sheet to validate current production status and availability.
Select this component for broadband RF power amplifier designs requiring high efficiency and low memory effects. Ensure the application circuit supports the specified 28 V drain-source voltage and 1200 mA quiescent current. Verify that the host system can accommodate the thermal requirements associated with the SOT1239B package.
This device belongs to the BLF8G22LS series of LDMOS power transistors manufactured by Ampleon USA Inc. It is specifically engineered for cellular infrastructure, offering enhanced performance metrics compared to standard variants within the same family line.
Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume functional equivalence with other models without verifying pinout compatibility and electrical specifications.
The device shows a typical video bandwidth of 110 MHz in a class-AB test circuit at 2140 MHz.
Yes, it is designed with lower output capacitance to improve performance in Doherty applications.
The maximum junction temperature (Tj) is rated at 225 °C.