BLF8G22LS-220J

Overview

The BLF8G22LS-220 is a 220 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA, delivering an average output power of 55 W per carrier in a two-carrier W-CDMA configuration. The device features a typical power gain of 17 dB and a drain efficiency of 33% under these conditions. It utilizes an earless flanged ceramic package (SOT502B) with a junction-to-case thermal resistance of 0.26 K/W at 80 °C case temperature.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Low Rth providing excellent thermal stability
• Designed for low memory effects providing excellent pre-distortability

Applications

• RF power amplifiers for W-CDMA base stations
• Multi carrier applications in the 2110 MHz to 2170 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements as stated in the datasheet. Ensure proper electrostatic discharge handling procedures are followed during storage and installation due to the sensitivity of the device.

Selection Notes

Select this component for high-power RF amplifier designs requiring operation within the 2110 MHz to 2170 MHz band. Consider the SOT502B earless flanged ceramic package for mounting constraints. Evaluate the thermal management system based on the specified junction-to-case thermal resistance of 0.26 K/W to maintain reliability under continuous operation at maximum temperatures.

Part Context

This part belongs to the BLF8G22LS series of power LDMOS transistors manufactured by Ampleon USA Inc. The series is engineered for robust performance in wireless communication infrastructure. The BLF8G22LS-220 specifically targets high-output power requirements in cellular base station architectures, offering a balance of efficiency and linearity for complex modulation schemes.

Replacement Considerations

Consult the official Ampleon replacement guide or contact the manufacturer directly for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical specifications and thermal characteristics against the original datasheet.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF8G22LS-220 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under class-AB operation conditions.

What is the gate-source threshold voltage range?

The gate-source threshold voltage ranges from a minimum of 1.5 V to a maximum of 2.3 V when measured at a drain-source voltage of 10 V and a drain current of 270 mA.

How is the device protected against electrostatic discharge?

The BLF8G22LS-220 includes integrated ESD protection. However, standard precautions for handling electrostatic sensitive devices should still be observed during assembly and testing.