BLF8G22LS-220U

BLF8G22LS-220U

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:24f039fc6c67 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:17dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.62 A
  • Power - Output:55W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLF8G22LS-220U

Overview

The BLF8G22LS-220 is a 220 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and features a maximum junction temperature of 225 °C. The device provides a typical power gain of 17 dB and a drain efficiency of 33% at an average output power of 55 W under two-carrier W-CDMA test conditions. It utilizes an SOT502B earless flanged ceramic package with a thermal resistance from junction to case of 0.26 K/W.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Low Rth providing excellent thermal stability
  • Designed for low memory effects providing excellent pre-distortability

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 2110 MHz to 2170 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation, as suffixes can indicate variations in packaging or testing criteria. Confirm RoHS compliance status directly with the supplier or official datasheet revision history. Ensure that the component matches the exact part number required for your design specifications before finalizing procurement orders.

Selection Notes

Select this component for high-power RF amplifier designs operating within the 2110 MHz to 2170 MHz band. Consider its 225 °C maximum junction temperature and low thermal resistance when designing heat dissipation solutions. Verify that the application environment supports the specified 28 V drain-source voltage and that the load impedance aligns with the provided typical impedance data for optimal performance.

Part Context

This device belongs to the Ampleon BLF8G series of LDMOS power transistors. These components are engineered specifically for telecommunications infrastructure, offering robust performance in demanding RF environments. The BLF8G22LS-220 variant focuses on delivering high output power and efficiency within the UMTS frequency bands, serving as a critical active element in modern cellular base station transmitter modules.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without rigorous electrical and mechanical validation.

BLF8G22LS-220UBLF8G22LS-220U

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