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The BLF8G22LS-220 is a 220 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and features a maximum junction temperature of 225 °C. The device provides a typical power gain of 17 dB and a drain efficiency of 33% at an average output power of 55 W under two-carrier W-CDMA test conditions. It utilizes an SOT502B earless flanged ceramic package with a thermal resistance from junction to case of 0.26 K/W.
Verify the specific ordering suffix against the manufacturer's current documentation, as suffixes can indicate variations in packaging or testing criteria. Confirm RoHS compliance status directly with the supplier or official datasheet revision history. Ensure that the component matches the exact part number required for your design specifications before finalizing procurement orders.
Select this component for high-power RF amplifier designs operating within the 2110 MHz to 2170 MHz band. Consider its 225 °C maximum junction temperature and low thermal resistance when designing heat dissipation solutions. Verify that the application environment supports the specified 28 V drain-source voltage and that the load impedance aligns with the provided typical impedance data for optimal performance.
This device belongs to the Ampleon BLF8G series of LDMOS power transistors. These components are engineered specifically for telecommunications infrastructure, offering robust performance in demanding RF environments. The BLF8G22LS-220 variant focuses on delivering high output power and efficiency within the UMTS frequency bands, serving as a critical active element in modern cellular base station transmitter modules.
Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without rigorous electrical and mechanical validation.