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The BLF8G22LS-270GV,12 is a 270 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It features improved video bandwidth and low memory effects. Typical performance at VDS = 28 V, IDq = 2400 mA, and Tcase = 25 °C includes an average output power of 80 W, power gain of 17.3 dB, drain efficiency of 29%, and ACPR of -29 dBc under 2-carrier W-CDMA conditions. The device has a drain-source breakdown voltage of 65 V and a junction-to-case thermal resistance of 0.26 K/W.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Ensure that the component matches the required SOT1244C earless flanged ceramic package specifications before procurement. Confirm RoHS compliance requirements align with project standards.
Select this component for high-efficiency RF power amplification in the 2 GHz band. Consider the 0.26 K/W thermal resistance for heat sink design. Evaluate impedance matching networks using the provided ZS and ZL data for optimal power transfer at target frequencies.
This part belongs to the BLF8G22LS series of LDMOS power transistors from Ampleon. It shares core electrical characteristics with the BLF8G22LS-270V but utilizes the SOT1244C package variant. The series targets broadband cellular infrastructure applications requiring high linearity and ruggedness.
The BLF8G22LS-270V serves as a direct functional equivalent within the same product family, differing primarily in package configuration.