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The BLF8G24LS-100GVQ is a 100 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features decoupling leads that provide an improved video bandwidth of 90 MHz typical, enabling excellent pre-distortability and low memory effects. The device operates with a drain-source voltage of 28 V and a quiescent current of 900 mA. In a common source class-AB production test circuit at Tcase = 25 °C, it delivers a power gain of 19 dB and a drain efficiency of 32% at 25 W output power. The part utilizes an earless flanged ceramic package (SOT1244C) with integrated ESD protection.
Verify the specific ordering suffix 'GVQ' against official Ampleon documentation to confirm package variant and compliance status. Ensure procurement channels are authorized distributors to guarantee component authenticity. Confirm RoHS Directive 2002/95/EC compliance requirements align with project specifications before finalizing orders.
Select this component for broadband operations requiring high efficiency and ruggedness in the 2300 MHz to 2400 MHz band. The internal matching reduces external component count, while the low thermal resistance ensures stability under continuous operation. Evaluate impedance data for load-pull matching networks to optimize power transfer and efficiency in the target application circuit.
This device belongs to the BLF8G series of power LDMOS transistors manufactured by Ampleon. The 'GVQ' suffix indicates a specific packaging or version within the BLF8G24LS-100 family, distinct from the standard 'V' variant which uses the SOT1244B package. Both variants share identical electrical characteristics but differ in physical package outline dimensions.
The BLF8G24LS-100V serves as the primary functional equivalent within the same product family. Verify package compatibility between SOT1244C and SOT1244B outlines during mechanical design reviews to ensure proper mounting and thermal interface alignment.