BLF8G24LS-100VJ

Overview

The BLF8G24LS-100VJ is a 100 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features decoupling leads that provide an improved video bandwidth of 90 MHz typical, and lower output capacitance optimized for Doherty configurations. The device operates with a drain-source voltage of 28 V and a quiescent current of 900 mA. In a common source class-AB test circuit at Tcase = 25 °C, it delivers 25 W average output power with a gain of 19 dB, drain efficiency of 32%, and an ACPR of -29 dBc under 2-carrier W-CDMA conditions.

Feature Summary

• Decoupling leads enable improved video bandwidth for enhanced linearity
• Lower output capacitance supports high-performance Doherty amplifier designs
• Internally matched structure simplifies RF circuit integration
• Integrated ESD protection safeguards against electrostatic discharge

Applications

• RF power amplifiers for base stations operating between 2300 MHz and 2400 MHz
• Multi-carrier applications utilizing W-CDMA modulation schemes
• Doherty power amplifier architectures requiring low memory effects

Procurement Notes

Verify the specific ordering suffix 'J' against official Ampleon documentation to confirm packaging or variant specifications. Ensure compatibility with SOT1244B or SOT1244C ceramic packages as defined in the product data sheet. Confirm RoHS compliance status prior to final procurement decisions.

Selection Notes

Select this component for broadband operations within the 2300 MHz to 2400 MHz band where high efficiency and ruggedness are required. The internal matching network reduces design complexity compared to unmatched alternatives. Evaluate thermal resistance characteristics to ensure adequate heat dissipation for continuous operation at maximum junction temperatures.

Part Context

This part belongs to the BLF8G24LS series of power LDMOS transistors manufactured by Ampleon. The series includes variants such as the BLF8G24LS-100V and BLF8G24LS-100GV, which share similar electrical profiles but may differ in package details or manufacturing revisions. These devices are engineered specifically for modern cellular infrastructure requirements.

Replacement Considerations

The BLF8G24LS-100GV serves as a direct functional equivalent within the same product family. Verify pinout compatibility and package dimensions (SOT1244B vs SOT1244C) before substitution. Consult the manufacturer for any updated revisions that may supersede current production units.

FAQ

What is the typical video bandwidth of the BLF8G24LS-100V?

The device exhibits a typical video bandwidth of 90 MHz in a class-AB test circuit within the 2.3 GHz to 2.4 GHz band.

How does the BLF8G24LS-100V handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is typically 0.29 K/W when measured at a case temperature of 80 °C and 48 W output power.