BLF8G24LS-150VJ

Overview

The BLF8G24LS-150VJ is a 150 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for digital pre-distortion. The device operates with a drain-source voltage of 28 V and quiescent current of 1300 mA. Typical performance at Tcase = 25 °C includes a power gain of 19 dB, drain efficiency of 33%, and an adjacent channel power ratio (ACPR) of -30 dBc under 2-carrier W-CDMA conditions. The maximum drain-source breakdown voltage is 65 V, and the junction temperature limit is 225 °C.

Feature Summary

• Decoupling leads enable improved video bandwidth for enhanced signal fidelity.
• Lower output capacitance improves performance in Doherty amplifier configurations.
• Designed for low memory effects to support excellent digital pre-distortion capability.
• Internally matched structure simplifies circuit integration and design.

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2300 MHz to 2400 MHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package variant and compliance status. Ensure that the component meets all relevant environmental directives and handling requirements specified in the product data sheet prior to procurement.

Selection Notes

Select this component for designs requiring high ruggedness and thermal stability in the 2.3 GHz to 2.4 GHz band. Consider the internal matching and decoupling leads when designing the RF interface. Verify that the application environment supports the specified junction temperature limits and thermal resistance characteristics.

Part Context

This part belongs to the BLF8G series of LDMOS power transistors manufactured by Ampleon USA Inc. The series is engineered for wireless infrastructure, specifically targeting wideband code division multiple access (W-CDMA) and similar modulation schemes used in modern cellular base stations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer for updated replacement information or equivalent specifications if discontinuation occurs.

FAQ

What is the typical video bandwidth of the BLF8G24LS-150VJ?

The device exhibits a typical video bandwidth of 70 MHz in class-AB operation within the 2.3 GHz to 2.4 GHz band.

Is the BLF8G24LS-150VJ internally matched?

Yes, the transistor is internally matched to facilitate ease of use in amplifier designs.

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 65 V.