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The BLF8G24LS-200P,112 is a 200 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1740 mA. The device delivers an average output power of 60 W with a typical power gain of 17.2 dB and a drain efficiency of 32%. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 1.2 S. The thermal resistance from junction to case is typically 0.217 K/W.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status and check for any product change notices or end-of-life announcements prior to procurement. Ensure handling precautions for electrostatic sensitive devices are followed during storage and installation.
Select this component for broadband operations between 2300 MHz and 2400 MHz where high efficiency and low memory effects are required. Consider the SOT539B earless flanged balanced ceramic package for mounting requirements. Evaluate impedance matching networks based on the provided half-section data for optimal performance at 2300 MHz and 2400 MHz.
This part belongs to the BLF8G24L-200P/BLF8G24LS-200P series of power LDMOS transistors manufactured by Ampleon USA Inc. The LS variant utilizes the SOT539B package, which is an earless flanged balanced ceramic package with four leads. This distinguishes it from the standard L variant that uses the SOT539A package with two mounting holes.
Public confirmed substitute part numbers are not available in the provided source material.