BLF8G24LS-200PNJ

Overview

The BLF8G24LS-200PN is a 200 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 28 V and features a maximum drain-source breakdown voltage of 65 V. The device delivers a typical power gain of 17.2 dB and a drain efficiency of 32% at an average output power of 60 W under 1-carrier W-CDMA test conditions. It utilizes an earless flanged balanced ceramic package (SOT539B) with four leads, providing a thermal resistance from junction to case of 0.217 K/W.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch
• Low thermal resistance ensuring excellent thermal stability
• Lower output capacitance optimized for Doherty applications
• Internally matched for ease of circuit integration

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2300 MHz to 2400 MHz range

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type SOT539B matches physical inspection. Ensure handling procedures comply with ESD sensitivity standards C2A and HBM Class 2 to prevent damage during assembly and testing.

Selection Notes

Select this component for wideband base station designs requiring high linearity and efficiency. Verify that the application environment supports the specified junction temperature limit of 200 °C. Ensure the PCB layout accommodates the flanged ceramic package dimensions and provides adequate thermal management for the specified power dissipation levels.

Part Context

This part belongs to Ampleon's BLF8G series of LDMOS power transistors. It is specifically engineered for broadband operations within the 2300 MHz to 2400 MHz band. The device integrates internal matching networks to simplify amplifier design while maintaining high performance metrics for modern wireless communication standards.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without cross-referencing electrical parameters and pin configurations.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF8G24LS-200PN can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases.

What is the ESD sensitivity classification for this component?

The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.

How does the device perform regarding memory effects?

It is designed for low memory effects, providing excellent pre-distortability for linear amplification.