BLF8G27LS-100U

Overview

The BLF8G27LS-100 is a 100 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and operates with a drain-source voltage of 28 V and quiescent current of 900 mA. The device delivers a typical power gain of 17 dB and drain efficiency of 28% at 25 W output power under two-carrier W-CDMA conditions. It utilizes an earless flanged ceramic SOT502B package, providing a thermal resistance from junction to case of 0.292 K/W. The transistor supports a maximum junction temperature of 225 °C and includes integrated ESD protection.

Feature Summary

• Designed for broadband operation across the 2500 MHz to 2700 MHz spectrum
• Lower output capacitance optimized for Doherty amplifier configurations
• Internally matched structure simplifies circuit integration
• Integrated electrostatic discharge (ESD) protection

Applications

• RF power amplifiers for base stations operating between 2500 MHz and 2700 MHz
• Multi-carrier applications utilizing 3GPP test model 1 signals
• Doherty amplifier architectures requiring low memory effects

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the specific part number. Ensure that the ordering suffix matches the required package version. Confirm RoHS compliance status through the latest product data sheet revision. Validate that the sourcing channel provides traceable manufacturing records.

Selection Notes

Select this component for designs requiring high ruggedness and low thermal resistance in the 2.5 GHz to 2.7 GHz band. Evaluate impedance matching networks using the provided load-pull data for optimal performance. Consider the internal matching capabilities when designing input and output circuits. Verify thermal management solutions can handle the specified junction-to-case resistance.

Part Context

This device belongs to the Ampleon BLF8 series of LDMOS power transistors. It is specifically engineered for wideband cellular infrastructure. The technology leverages advanced silicon LDMOS processes to achieve high linearity and efficiency. It serves as a core active element for modern multi-standard base station power amplification stages.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence based on similar naming conventions or generic specifications.