BLF8G27LS-100V,112

Overview

The BLF8G27LS-100V is a 100 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems like 3GPP test model 1 with 64 DPCH. The device operates at VDS = 28 V and IDq = 900 mA, delivering 25 W average output power with 17 dB gain and 28% drain efficiency. It includes integrated ESD protection and decoupling leads that enable an 110 MHz typical video bandwidth.

Feature Summary

• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• Decoupling leads provide improved video bandwidth for broadband operation
• Low thermal resistance ensures excellent thermal stability
• Internally matched design simplifies circuit integration

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2500 MHz to 2700 MHz range
• W-CDMA signal processing

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm package version and compliance status. Confirm RoHS directive compliance and check for any product change notices or obsolescence alerts before finalizing procurement plans.

Selection Notes

Select this component for high-efficiency Class-AB amplifier designs requiring robust load mismatch tolerance. Ensure the application supports the specified 28 V drain voltage and 900 mA quiescent current. Verify that the PCB layout accommodates the SOT1244B flanged ceramic package dimensions.

Part Context

This part belongs to the Ampleon BLF8 series of LDMOS power transistors. It is specifically engineered for cellular infrastructure, offering enhanced performance over previous generations through optimized internal matching and decoupling structures for modern wideband modulation schemes.

Replacement Considerations

BLF8G27LS-100GV (SOT1244C package variant)