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Product Detailed Parameters
- Description：RF MOSFET LDMOS 32V SOT502B
- Series：-
- Mfr：Ampleon USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：LDMOS
- Frequency：2.62GHz ~ 2.69GHz
- Gain：17.4dB
- Voltage - Test：32 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.3 A
- Power - Output：45W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-502B
- Supplier Device Package：SOT502B
- Configuration：-
Download product information
Overview
The BLF8G27LS-140 is a 140 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of up to 65 V and features an internal matching network. Typical performance at 32 V and 1300 mA quiescent current includes a gain of 17.4 dB, drain efficiency of 32%, and an adjacent channel power ratio of -30 dBc under 2-carrier W-CDMA conditions. The device utilizes an earless flanged ceramic package (SOT502B) with a junction-to-case thermal resistance of 0.27 K/W.
Feature Summary
- Internally matched for ease of use
- Integrated ESD protection
- Lower output capacitance for improved Doherty application performance
- Designed for low memory effects providing excellent pre-distortability
Applications
- RF power amplifier for W-CDMA base stations
- Multi carrier applications in the 2500 MHz to 2700 MHz frequency range
Procurement Notes
Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Confirm RoHS compliance status as per Directive 2002/95/EC during procurement. Ensure storage temperature limits between -65 °C and +150 °C are maintained prior to installation.
Selection Notes
Select this component for high-efficiency RF power amplification in cellular infrastructure. Evaluate thermal management requirements given the 0.27 K/W junction-to-case resistance. Consider the ruggedness capability supporting VSWR mismatches up to 10:1 for robust deployment in varying load conditions.
Part Context
This part belongs to the BLF8 series of LDMOS transistors manufactured by Ampleon USA Inc. It is housed in the SOT502B earless flanged ceramic package. The product data sheet revision 3 was released on September 1, 2015, superseding previous versions.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDS) is rated at 65 V.
Does the device include internal matching?
Yes, the BLF8G27LS-140 is internally matched for ease of use.
What is the typical thermal resistance from junction to case?
The typical thermal resistance from junction to case (Rth(j-c)) is 0.27 K/W.
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