BLF8G27LS-150GVQ

BLF8G27LS-150GVQ

$58.38
  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-

SKU:01c2a30ea26e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tube
  • Technology:LDMOS
  • Frequency:2.6GHz ~ 2.7GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.3 A
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1244C
  • Supplier Device Package:CDFM6
  • Configuration:-

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BLF8G27LS-150GVQ

Overview

The BLF8G27LS-150GVQ is a 150W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for digital pre-distortion. The device operates at a drain-source voltage of 28 V with a quiescent current of 1300 mA. Typical performance includes a power gain of 18 dB, drain efficiency of 30%, and an adjacent channel power ratio of -30 dBc under two-carrier W-CDMA conditions. It utilizes an earless flanged ceramic package (SOT1244C) with decoupling leads.

Feature Summary

  • Decoupling leads enable improved video bandwidth for enhanced digital signal processing
  • Lower output capacitance improves performance in Doherty amplifier configurations
  • Designed for low memory effects to support excellent digital pre-distortion capability
  • Internally matched structure simplifies circuit integration and design

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz frequency range
  • Amplifiers utilizing Doherty architecture

Procurement Notes

Verify the specific ordering suffix GVQ against the manufacturer's current product data sheet to confirm the SOT1244C package variant. Ensure compliance with electrostatic discharge handling protocols during storage and assembly. Confirm that the application environment remains within the specified thermal and electrical limiting values to maintain device reliability.

Selection Notes

Select this component for wideband code division multiple access systems requiring high linearity and ruggedness. The internal matching reduces external component count compared to unmatched variants. Evaluate thermal management requirements based on the junction-to-case thermal resistance to ensure operation within the maximum junction temperature limits under continuous wave or modulated load conditions.

Part Context

This part belongs to the BLF8G27LS-150V series of power LDMOS transistors manufactured by Ampleon. The 'GV' designation indicates the specific package version SOT1244C, which differs from the SOT1244B variant found in other suffixes. The series is engineered for cellular infrastructure, providing a balance of high power output and efficiency for modern communication standards.

Replacement Considerations

The BLF8G27LS-150V serves as the primary counterpart within the same family. Verify pinout compatibility and package dimensions when substituting between SOT1244B and SOT1244C versions. Cross-reference impedance data and thermal characteristics to ensure equivalent performance in the target circuit design.

BLF8G27LS-150GVQBLF8G27LS-150GVQ
$58.38
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