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The BLF8G38LS-75V is a 75 W LDMOS power transistor designed for base station applications operating between 3400 MHz and 3800 MHz. It features improved video bandwidth, high efficiency, and low thermal resistance. The device has a drain-source voltage rating of 65 V and operates with a typical quiescent current of 600 mA at 30 V. In a class-AB production test circuit at Tcase = 25 °C, it delivers 20 W output power with 15.5 dB gain, 26% drain efficiency, and -30 dBc ACPR5M using a 1-carrier W-CDMA signal.
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the package version matches the required SOT1239B earless flanged ceramic configuration. Ensure compliance with Directive 2002/95/EC regarding hazardous substances if applicable to your manufacturing process.
Select this component for broadband operations requiring high efficiency and low memory effects. Verify that the application supports Class-AB operation within the specified 3400 MHz to 3800 MHz range. Ensure the design accommodates the 65 V maximum drain-source voltage and manages the junction temperature below 225 °C.
This part belongs to the Ampleon BLF8 series of LDMOS power transistors. It is specifically engineered for cellular infrastructure, offering improved video bandwidth compared to standard models. The device utilizes an earless flanged LDMOST ceramic package (SOT1239B) suitable for high-power RF applications.
Consult the official Ampleon datasheet or contact the manufacturer directly for confirmed substitute part numbers. Do not assume cross-compatibility with other BLF series devices without verifying electrical parameters and pin configurations.