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The Ampleon BLF981U is a Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) power transistor designed for high-efficiency broadband applications. It delivers an output power of 170W with a typical gain of 24dB across a frequency range from HF to 1400MHz. The device features a drain-source breakdown voltage (Vds) of 108V and operates at a maximum junction temperature of +225°C. Housed in the SOT-467C package, it supports robust thermal management and includes integrated dual-sided ESD protection.
Verify the specific suffix against official documentation to confirm package type and pinout configuration. Ensure compatibility with existing thermal management solutions given the high power density. Confirm RoHS compliance status through current manufacturer declarations before finalizing procurement specifications.
Select this component for designs requiring high power gain and efficiency in broadband RF environments. Consider the SOT-467C package dimensions for PCB layout constraints. Evaluate thermal resistance requirements to maintain junction temperatures within safe operating limits during continuous wave operation.
This LDMOS transistor belongs to the Ampleon BLF981 series, engineered specifically for demanding RF power amplification tasks. The series emphasizes reliability and performance consistency across wide frequency bands, serving as a critical active element in professional transmission infrastructure.
Consult official substitution lists for verified equivalents. Generic replacements may not match the specific gain or ruggedness characteristics required for broadcast and avionics applications.