BLF988,112

Overview

The BLF988,112 is a 600 W LDMOS RF power transistor designed for transmitter and industrial applications. It operates within the 400 MHz to 1000 MHz frequency range with internal input matching. The device features excellent ruggedness, supporting VSWR ≥ 40:1 through all phases. Key electrical parameters include a drain-source voltage of 50 V, quiescent drain current of 1.3 A, and peak output power of 600 W in pulsed class-AB operation at 860 MHz. In continuous wave 2-tone tests at 860 MHz, it delivers an average output power of 250 W with a typical power gain of 20.8 dB and drain efficiency of 46%. The thermal resistance from junction to case is 0.15 K/W.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch conditions
• Internal input matching network for optimized broadband performance
• High power gain and high drain efficiency characteristics
• RoHS compliant construction

Applications

• Communication transmitter applications
• Industrial applications

Procurement Notes

Verify the specific package variant required for the design, as the BLF988 (SOT539A) includes mounting holes while the BLF988S (SOT539B) is earless. Confirm that the application environment remains within the specified junction temperature limits to ensure long-term reliability. Check for any recent product change notices or end-of-life announcements directly from Ampleon before finalizing procurement plans.

Selection Notes

Select this component for broadband designs operating between 400 MHz and 1000 MHz requiring high power output. Ensure the circuit design accommodates the internal input matching for optimal gain across the band. Verify that the thermal management system can maintain the case temperature within specifications given the low thermal resistance value. Consider the balanced ceramic package constraints for PCB layout and mounting.

Part Context

The BLF988 belongs to Ampleon's Power LDMOS transistor series, specifically engineered for robust RF power amplification. It utilizes a flanged balanced ceramic package available in two mechanical variations to suit different mounting requirements. The device is part of a broader portfolio of LDMOS transistors used in professional communication infrastructure.

Replacement Considerations

The BLF988S serves as the earless flanged alternative to the standard BLF988. Both share identical electrical characteristics but differ in mechanical mounting features. No other direct functional substitutes are documented in the provided datasheet.