BLF988S,112

Overview

The BLF988S,112 is a dual N-channel LDMOS RF power transistor manufactured by Ampleon USA Inc. It operates within the UHF frequency band of 470MHz to 860MHz. The device features a common source configuration with a maximum drain-source voltage rating of 110V and a test voltage of 50V. It delivers an output power of 250W with a gain of 20.8dB at a test current of 1.3A. The component is housed in a SOT539B package and supports surface mount installation.

Feature Summary

• Dual-element LDMOS construction for high-power RF applications
• Optimized for broadband operation across the UHF spectrum
• Integrated thermal management via robust ceramic packaging

Applications

• Broadcast transmitter systems
• Industrial, Scientific, and Medical (ISM) equipment
• Avionics communication systems
• Non-cellular wireless infrastructure

Procurement Notes

Verify the manufacturer designation as Ampleon USA Inc., as some listings may reference NXP due to historical lineage. Confirm the specific suffix

Selection Notes

Select this component for UHF broadband applications requiring 250W output power. Ensure the design accommodates the SOT539B footprint and provides adequate heat sinking for the specified power dissipation. Verify that the operating voltage does not exceed the 110V drain-source rating.

Part Context

This part belongs to the BLF series of LDMOS transistors designed for high-efficiency RF power amplification. It serves as a successor or variant to earlier NXP-branded devices, now produced under Ampleon's portfolio. The technology leverages mature silicon LDMOS processes to deliver rugged performance in demanding broadcast and industrial environments.

Replacement Considerations

The BLF888BS,112 is a related dual-channel UHF LDMOS transistor from the same manufacturer offering higher power output. Designers should verify pin compatibility and thermal requirements when considering cross-references within the Ampleon UHF portfolio.