BLF989ESU

BLF989ESU

$157.71
  • Description:RF MOSFET LDMOS 50V SOT539B
  • Series:-

SKU:9f5ff9a45531 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT539B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:470MHz ~ 700MHz
  • Gain:20dB
  • Voltage - Test:50 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:600 mA
  • Power - Output:1000W
  • Voltage - Rated:108 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-539B
  • Supplier Device Package:SOT539B
  • Configuration:Dual, Common Source

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BLF989ESU

Overview

The BLF989ESU is a 1000 W LDMOS RF power transistor designed for asymmetrical broadcast Doherty transmitter applications. It operates in the frequency range of 400 MHz to 860 MHz and delivers an average output power of 180 W for DVB-T signals. The device features a main amplifier section and a peak amplifier section within a single SOT539BN package. Key electrical parameters include a drain-source voltage of 50 V, a typical power gain of 20 dB at 550 MHz, and a drain efficiency of 52%. The component exhibits excellent ruggedness, capable of withstanding load mismatches up to 40:1 VSWR.

Feature Summary

  • Designed specifically for asymmetric Doherty operation to enable high-efficiency air-cooled transmitters
  • Integrated ESD protection compliant with CDM Class C2A and HBM Class 2 standards
  • Excellent ruggedness suitable for digital and analog transmitter environments
  • High power gain and easy power control characteristics

Applications

  • Broadcast transmitter applications in the UHF band
  • Digital broadcasting systems including DVB-T
  • Asymmetrical Doherty transmitter architectures

Procurement Notes

Verify the specific ordering suffix 'U' corresponds to the tray packaging configuration as defined in the official Ampleon ordering information. Confirm that the SOT539BN package outline matches the mechanical requirements of the target assembly. Ensure compliance with RoHS directives by checking the manufacturer's product details page prior to final procurement decisions.

Selection Notes

Select this component for UHF band applications requiring high power density and robust performance under varying load conditions. The dual-section design supports efficient Doherty modulation schemes. Verify thermal management capabilities against the specified junction-to-case thermal resistance values. Ensure the operating frequency falls within the 400 MHz to 860 MHz range for optimal gain and efficiency performance.

Part Context

The BLF989ESU belongs to the BLF989 series of UHF power LDMOS transistors manufactured by Ampleon. This series includes variants such as the BLF989E (SOT539AN) and BLF989ES (SOT539BN). The BLF989ESU specifically denotes the earless flanged balanced ceramic package variant intended for high-power broadcast applications.

Replacement Considerations

The BLF989EU serves as a direct functional substitute within the same family, differing primarily in the SOT539AN flanged package compared to the SOT539BN earless package. Mechanical mounting interfaces must be verified when swapping between these package types.

BLF989ESUBLF989ESU
$157.71
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