BLF9G20LS-160VU

Overview

The BLF9G20LS-160V is a 160 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and low memory effects for excellent pre-distortability. The device operates at VDS = 28 V with IDq = 800 mA, delivering an average output power of 35.5 W per carrier in a 2-carrier W-CDMA test circuit. Typical performance includes a power gain of 19.8 dB, drain efficiency of 33.5%, and an adjacent channel power ratio (ACPR) of -28 dBc. The thermal resistance from junction to case is 0.17 K/W.

Feature Summary

• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• Lower output capacitance optimized for Doherty applications
• Internally matched for ease of use
• Integrated ESD protection

Applications

• RF power amplifier for multi-systems base stations
• Multi-carrier applications in the 1800 MHz to 2000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation before purchase. Confirm that the component matches the required SOT1120B earless flanged package. Ensure compliance with RoHS Directive 2002/95/EC requirements as stated in the product data sheet. Check for any recent product change notices or obsolescence announcements directly from Ampleon.

Selection Notes

Select this component for high-efficiency RF power amplification in cellular infrastructure. The device is suitable for designs requiring low thermal resistance and high linearity. Consider the internal matching network when designing input and output circuits. Verify that the application environment supports the specified junction temperature limits and thermal management requirements.

Part Context

This part belongs to the BLF9G20 series of LDMOS power transistors manufactured by Ampleon USA Inc. The series is engineered for robust performance in demanding RF environments. The BLF9G20LS-160V specifically targets the 1800-2000 MHz band with enhanced video bandwidth capabilities compared to earlier generations.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics carefully if considering non-official substitutes.

FAQ

What is the typical video bandwidth of the BLF9G20LS-160V?

The device has a typical video bandwidth of 110 MHz when measured in a class-AB test circuit operating at a center frequency of 1840 MHz.

Can the BLF9G20LS-160V withstand high VSWR conditions?

Yes, it can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified CW operating conditions.

What is the maximum junction temperature for this transistor?

The maximum junction temperature is 225 °C according to the absolute maximum rating system.