BLF9G38LS-90PJ

Overview

The BLF9G38LS-90PJ is a 90 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3600 MHz frequency range. It operates with a drain-source voltage of 28 V and features an earless flanged ceramic package (SOT1121B). The device provides typical power gain of 15 dB and drain efficiency up to 37% under IS-95 test conditions. It includes integrated ESD protection and is internally matched for ease of use.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance for improved performance in Doherty applications
• Designed for low memory effects providing excellent pre-distortability

Applications

• RF power amplifier for LTE base stations
• Multi carrier applications in the 3400 MHz to 3600 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation, as suffixes can indicate variations in packaging or testing criteria. Confirm RoHS compliance status directly with the supplier. Ensure that the procurement channel sources products from authorized distributors to guarantee authenticity and adherence to the specified product data sheet standards.

Selection Notes

Select this component for designs requiring high power output in the 3.4 GHz to 3.6 GHz band. Consider its internal matching and low memory effects when designing linear amplifiers. Evaluate the thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet for continuous wave operation at the intended operating frequencies.

Part Context

This part belongs to the BLF9G38LS series of LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless infrastructure, offering a balance of high power density and linearity. The SOT1121B package facilitates efficient heat dissipation through the flange connection, which is critical for maintaining reliability in high-power RF environments.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-referencing requires matching key parameters such as frequency range, output power, and package type to ensure functional compatibility without redesigning the host circuit board.