BLL1214-250,112

BLL1214-250,112

  • Description:RF MOSFET LDMOS 36V SOT502A
  • Series:-

SKU:af02533ece36 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 36V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.2GHz ~ 1.4GHz
  • Gain:12dB
  • Voltage - Test:36 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:250W
  • Voltage - Rated:75 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLL1214-250,112

Overview

The BLL1214-250 is an L-band radar silicon N-channel enhancement mode lateral D-MOS transistor manufactured by Ampleon. It operates within the 1200 to 1400 MHz frequency range and delivers a rated output power of 250 W under pulsed class-AB conditions (tp = 1 ms; δ = 10%). The device functions at a drain-source voltage of 36 V with a typical gain exceeding 12 dB and drain efficiency greater than 42%. It utilizes a SOT502A flange package where the common source connects directly to the mounting base, eliminating the need for DC isolators.

Feature Summary

  • High power gain and excellent ruggedness suitable for demanding RF environments
  • Source connected to mounting base reduces common mode inductance and eliminates DC isolators
  • Capable of withstanding load mismatches corresponding to VSWR=3:1 through all phases

Applications

  • L-band radar applications in the 1200 to 1400 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging or variant specifications. Ensure compatibility with standard thermal management solutions designed for the SOT502A flange package. Confirm that the application circuit supports the required pulsed operation parameters for optimal performance.

Selection Notes

Select this component for high-power L-band radar systems requiring robust performance in the 1200 to 1400 MHz band. Consider the direct source-to-flange connection for simplified biasing and reduced parasitic inductance. Ensure the design accommodates the specified pulsed duty cycle and thermal impedance requirements for reliable operation.

Part Context

This part belongs to the family of LDMOS transistors designed for high-power RF amplification. It represents a transition from Philips Semiconductors to the independent Ampleon brand, maintaining established technical specifications while updating corporate branding and contact details in subsequent documentation releases.

Replacement Considerations

Consult official substitution lists for verified alternatives. Generic replacements may not match the specific ruggedness characteristics or thermal impedance values defined for the SOT502A package configuration.

BLL1214-250,112BLL1214-250,112

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