BLL6H0514-25,112

Overview

The BLL6H0514-25 is a 25 W LDMOS transistor designed for pulsed applications in the 0.5 GHz to 1.4 GHz range. It operates with a drain-source voltage of 50 V and delivers 25 W output power at 1.2 GHz, achieving a typical power gain of 21 dB and drain efficiency of 59%. The device features integrated ESD protection and excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases under specified conditions. Packaged in the SOT467C flanged ceramic package with two mounting holes, it ensures high thermal stability and flexibility regarding pulse formats.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• Excellent ruggedness against load mismatch
• High efficiency and thermal stability
• Broadband operation from 0.5 GHz to 1.4 GHz

Applications

• Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

Procurement Notes

Verify the component authenticity by checking the marking on the SOT467C package against official Ampleon documentation. Ensure the ordering suffix matches the required version. Confirm that the supplier provides valid traceability documents. Check for physical damage to the flange or leads before installation. Validate compliance with RoHS directives as stated in the product data sheet.

Selection Notes

Select this component for pulsed RF driver stages requiring 25 W output within the UHF band. Ensure the application circuit maintains a VDS of 50 V and IDq of 50 mA for optimal performance. Verify that the load impedance matches the provided typical values for the target frequency. Consider the transient thermal impedance when designing heat sinking for specific pulse widths and duty cycles.

Part Context

This part belongs to the Ampleon LDMOS driver transistor series, specifically engineered for broadband pulsed RF amplification. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology to provide high power density and reliability. The SOT467C package facilitates efficient heat dissipation through the flange, making it suitable for compact, high-performance radio frequency systems.

Replacement Considerations

No direct substitute part numbers are documented in the public datasheet. Designers should evaluate other Ampleon LDMOS transistors with similar power ratings and frequency ranges, ensuring compatibility with the existing biasing and impedance matching networks.