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The BLL6H1214L-250 is a 250 W LDMOS power transistor designed for L-band radar applications operating between 1.2 GHz and 1.4 GHz. It utilizes a ceramic SOT502A package with two mounting holes and two leads. The device operates at a drain-source voltage of 50 V, delivering 250 W output power with 17 dB gain and 55% efficiency under pulsed RF conditions (300 µs pulse width, 10% duty cycle). Key electrical parameters include a drain-source breakdown voltage of 100 V, a gate-source threshold voltage ranging from 1.3 V to 2.25 V, and a maximum junction temperature of 200 °C.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Confirm RoHS Directive 2002/95/EC compliance through current datasheets. Ensure handling procedures account for ElectroStatic Discharge sensitivity during transport and installation.
Select this component for high-power L-band radar systems requiring robust performance within the 1.2 GHz to 1.4 GHz spectrum. Evaluate thermal management requirements based on transient thermal impedance data. Verify that the application circuit design accommodates the specified class-AB operation parameters and load mismatch tolerance.
This part belongs to the BLL6H1214L(S)-250 series of LDMOS L-band radar power transistors manufactured by Ampleon. The series includes variants such as the BLL6H1214LS-250, which differs primarily in package configuration. These devices are engineered for demanding radar environments requiring high efficiency and reliability.
Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without rigorous testing and verification against the original specifications.