SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLL8H0514-25 is a 25 W LDMOS transistor designed for pulsed applications in the 0.5 GHz to 1.4 GHz range. It operates with a drain-source voltage of 50 V and delivers 25 W output power at 960 MHz to 1400 MHz. The device features a flanged ceramic SOT467C package with two mounting holes and two leads. Key electrical parameters include a drain-source breakdown voltage of 110 V, a gate-source threshold voltage of 1.9 V typical, and a forward transconductance of 150 mS. At 1.2 GHz, it achieves a power gain of 21 dB and a drain efficiency of 59% under pulsed conditions.
Verify the specific ordering information against the manufacturer's current documentation before procurement. Confirm that the SOT467C flanged ceramic package matches the mechanical constraints of the target application. Ensure compliance with RoHS directives as stated in the product profile. Validate thermal management requirements based on the transient thermal impedance data provided in the datasheet.
Select this component for designs requiring high ruggedness and flexible pulse format support within the UHF band. The device is optimized for class-AB pulsed operation with a maximum junction temperature of 225 °C. Consider the input return loss and impedance values when designing matching networks. Verify that the required output power does not exceed the 25 W limit under specified test conditions.
This part belongs to Ampleon's portfolio of power LDMOS transistors intended for RF amplification. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology to provide high efficiency and thermal stability. The SOT467C package facilitates surface mounting while providing a robust connection to the heat sink through the flange.
No public confirmed substitute part numbers are documented in the source material.