BLM8G0710S-30PBYZ

BLM8G0710S-30PBYZ

  • Description:RF FET LDMOS 65V 35DB SOT12112
  • Series:-

SKU:ea6536ebcf27 Category: Brand:

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Product Detailed Parameters

  • Description:RF FET LDMOS 65V 35DB SOT12112
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS (Dual)
  • Frequency:700MHz ~ 1GHz
  • Gain:35.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:120 mA
  • Power - Output:3W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1211-3
  • Supplier Device Package:16-HSOPF
  • Configuration:-

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BLM8G0710S-30PBYZ

Overview

The BLM8G0710S-30PBYZ is a dual-section, two-stage power MMIC utilizing Ampleon's GEN8 LDMOS technology. Designed for broadband operation from 700 MHz to 1000 MHz, it serves as a general-purpose driver or small cell final stage. The device features integrated temperature-compensated bias and high section-to-section isolation. Typical RF performance at Tcase = 25 °C with VDS = 28 V includes a power gain of 35 dB, drain efficiency of 27%, and output power of 3 W per section under single-carrier W-CDMA conditions. It supports various circuit topologies including Doherty and push-pull configurations.

Feature Summary

  • Dual-section architecture with high isolation enabling flexible combinations
  • Integrated temperature compensated bias for thermal stability
  • Externally accessible biasing for individual stages
  • On-chip matching for simplified circuit design

Applications

  • RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz range
  • Asymmetric final stage in Doherty configuration
  • General purpose driver amplifier

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead frame type and RoHS compliance status. Confirm package variant matches application requirements. Ensure ESD handling protocols are followed during assembly due to sensitivity classification. Cross-reference pinout diagrams with PCB layout specifications before production.

Selection Notes

Select this component for applications requiring high power gain and excellent thermal stability within the 700 MHz to 1000 MHz band. Evaluate impedance data for optimal load-pull tuning based on target output power and efficiency metrics. Consider the dual-section design for balanced power distribution in multi-stage amplifier architectures.

Part Context

This part belongs to the BLM8G0710S series of LDMOS power MMICs. Variants such as BLM8G0710S-30PB and BLM8G0710S-30PBG share identical electrical characteristics but differ in package lead style. The series is engineered for multiband cellular infrastructure applications requiring robust performance and ease of integration.

Replacement Considerations

BLM8G0710S-30PB and BLM8G0710S-30PBG are electrically equivalent alternatives differing only in package outline.

BLM8G0710S-30PBYZBLM8G0710S-30PBYZ

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